The PECVD (Plasma Enhanced Chemical Vapor Deposition) system is designed for efficient thin-film deposition with advanced control features. Key specifications include chamber heating at 80°C, dual RF (30/300W) and LF (600W, 50-460kHz) generators, and a vacuum system with high exhaust speeds. The system supports substrate handling up to 460mm, offers temperature control from 20°C to 400°C (extendable to 1200°C), and includes features like RF switching for stress control and in-situ plasma cleaning. Its compact design, touch screen interface, and energy-efficient operation make it suitable for various industrial applications.
Key Points Explained:
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Power Generation & Plasma Control
- RF Generators: 30W and 300W options for precise plasma control.
- LF Generator: 600W solid-state unit operating at 50-460kHz for enhanced deposition flexibility.
- Plasma Creation: Uses RF, AC, or DC discharge to ionize gas, enabling low-temperature reactions. Learn more about plasma enhanced chemical vapor deposition system.
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Chamber & Electrode Design
- Heated Chamber Walls: Maintained at 80°C for stable deposition conditions.
- Electrode Sizes: 240mm and 460mm options, supporting wafers up to 460mm in diameter.
- Temperature Ranges: Lower electrode heats substrates from 20°C to 400°C (optional 1200°C for high-temperature processes).
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Vacuum System
- Pump Configuration: Two-stage rotary vane pump (160L/min) paired with a TC75-controlled molecular pump.
- Exhaust Speeds: 60L/s for nitrogen, 55L/s with protective net.
- Compression Ratios: 2×10⁷ for N₂, 3×10³ for H₂, with a max back pressure of 800Pa.
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Gas & Process Control
- Gas Pod: 12-line system with mass-flow-controlled (MFC) lines for precise gas delivery.
- Dopants & Precursors: Supports various dopants and liquid precursors for tailored film properties.
- Software: Parameter ramping for automated process adjustments.
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Operational Features
- RF Switching: Adjusts stress levels in deposited films.
- In-Situ Cleaning: Plasma cleaning with endpoint detection reduces downtime.
- Touch Screen Interface: Integrated control for ease of use.
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Energy Efficiency & Throughput
- Lower operational temperatures reduce energy consumption.
- Faster deposition rates and compact design enhance throughput.
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Maintenance & Durability
- Ceramic Bearings: Grease-lubricated with 20,000-hour lifespan.
- Forced Air Cooling: Ensures stable performance during extended operation.
These specifications highlight the system’s versatility for research and production, balancing precision, efficiency, and user-friendly operation.
Summary Table:
| Feature | Specification |
|---|---|
| Power Generation | Dual RF (30W/300W) + LF (600W, 50-460kHz) generators |
| Chamber Heating | 80°C walls, substrate heating (20°C–400°C, extendable to 1200°C) |
| Vacuum System | 160L/min rotary pump + TC75 molecular pump, 60L/s exhaust speed (N₂) |
| Gas Control | 12-line MFC gas pod for dopants/precursors |
| Operational Features | RF stress switching, in-situ plasma cleaning, touch screen interface |
| Energy Efficiency | Low-temperature operation, compact design, faster deposition rates |
Upgrade your lab with a high-performance PECVD system!
Leveraging KINTEK's advanced R&D and in-house manufacturing, our PECVD systems deliver precision thin-film deposition with customizable features for research and industrial applications. Whether you need high-temperature capabilities, automated gas control, or compact throughput solutions, our systems are engineered to meet your needs. Contact us today to discuss how we can optimize your deposition processes!
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