The vacuum chamber in PECVD (Plasma-Enhanced Chemical Vapor Deposition) equipment is a critical component designed to facilitate precise thin-film deposition under controlled conditions. Key characteristics include its stainless steel construction, capacitive coupling design, and integration of heating, gas distribution, and plasma generation systems. The chamber supports high-temperature operations (up to 1000°C), adjustable sample rotation, and uniform gas distribution via a showerhead electrode. Additional features like observation windows, cooling channels, and exhaust ports enhance functionality for applications ranging from semiconductor fabrication to protective coatings.
Key Points Explained:
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Material and Construction
- Made of stainless steel (245mm diameter × 300mm height) for durability and corrosion resistance.
- Includes integral cooling channels to manage thermal loads during operation.
- Front-door design for easy access and maintenance.
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Heating and Temperature Control
- Supports sample heating from room temperature to over 1000°C with ±1°C accuracy.
- Equipped with a heated platen (100mm diameter sample stand) for uniform thermal distribution.
- Temperature controller ensures stability, critical for processes like amorphous silicon or nitride deposition.
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Gas Distribution and Plasma Generation
- Uses a showerhead nozzle (100mm spray head) as both a gas distributor and RF electrode to generate plasma.
- Adjustable gas-spray spacing (40–100mm) optimizes film uniformity.
- RF energy (13.56 MHz typical) ionizes gases, enabling low-temperature deposition compared to traditional CVD.
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Sample Handling and Rotation
- Rotatable sample table (1–20 rpm) enhances coating uniformity by minimizing shadowing effects.
- Exhaust ports below the wafer level remove by-product gases efficiently.
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Additional Features
- 100mm observation window with a baffle for process monitoring without contamination risk.
- Compatible with diverse coatings (e.g., oxides, nitrides, polymers like fluorocarbons) for flexible applications.
- Compact design with touchscreen controls for user-friendly operation.
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Applications
- Ideal for depositing hydrophobic, anti-corrosive, or dielectric films (e.g., SiO₂, Si₃N₄).
- Used in semiconductor devices, optical coatings, and protective layers via mpcvd machine technology.
The chamber’s design balances precision (e.g., temperature control), flexibility (material compatibility), and scalability (single-wafer processing), making it indispensable for advanced material synthesis. How might these features align with your specific deposition needs?
Summary Table:
| Feature | Description |
|---|---|
| Material | Stainless steel (245mm diameter × 300mm height) with cooling channels. |
| Temperature Range | Up to 1000°C with ±1°C accuracy via heated platen. |
| Gas Distribution | Showerhead nozzle (100mm) for uniform gas flow and RF plasma generation. |
| Sample Handling | Rotatable table (1–20 rpm) to minimize shadowing effects. |
| Additional Features | Observation window, exhaust ports, and touchscreen controls for ease of use. |
| Applications | Semiconductor fabrication, optical coatings, and protective films. |
Upgrade your lab with precision-engineered PECVD solutions!
At KINTEK, we specialize in high-performance vacuum chambers tailored for advanced thin-film deposition. Our PECVD systems combine robust stainless steel construction, ultra-precise temperature control, and customizable gas distribution to meet your unique research or production needs. Whether you're depositing hydrophobic coatings, dielectric films, or semiconductor layers, our in-house R&D and manufacturing capabilities ensure a perfect fit for your requirements.
Contact us today to discuss how our PECVD technology can enhance your lab's capabilities!
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