The plasma enhanced chemical vapor deposition system supports wafer sizes up to 6 inches, as confirmed by multiple references. This standard size accommodates various thin-film deposition needs while balancing process efficiency and equipment scalability. The system's design, including its 205 mm heated lower electrode, aligns with this wafer capacity, enabling uniform coatings for semiconductor, optical, and barrier film applications.
Key Points Explained:
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Maximum Wafer Size Supported
- The system handles wafers up to 6 inches (150 mm) in diameter, a common size for research and pilot-scale production.
- This capacity is explicitly stated across three independent references, ensuring reliability.
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Equipment Design Compatibility
- The 205 mm lower electrode (larger than the 6" wafer) ensures even plasma distribution and temperature control during deposition.
- A 160 mm pumping port maintains consistent vacuum conditions critical for uniform film quality.
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Process Advantages for 6" Wafers
- Low-temperature deposition (enabled by PECVD) prevents thermal stress on larger wafers.
- Parameter ramping software allows precise control over film properties across the entire wafer surface.
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Typical Applications
- Semiconductors: Deposition of silicon-based insulating layers.
- Packaging: Gas barrier films for food/pharmaceuticals (e.g., oxygen/moisture protection).
- Optics/coatings: Diamond-like carbon (DLC) for wear resistance.
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Scalability Considerations
- While 6" is the referenced maximum, smaller wafers (e.g., 4") can also be processed using the same system.
- The 12-line gas pod supports diverse precursor gases for tailored films without hardware changes.
For high-volume production, users should verify if larger systems (e.g., 8" or 12") are available, as this model focuses on versatility for mid-scale needs. The combination of heated electrodes, gas control, and plasma uniformity makes it ideal for prototyping or specialized coatings.
Summary Table:
| Feature | Specification |
|---|---|
| Max Wafer Size | 6 inches (150 mm) |
| Lower Electrode Size | 205 mm (ensures uniform plasma distribution) |
| Pumping Port | 160 mm (maintains vacuum stability) |
| Key Applications | Semiconductors, barrier films, optical coatings (e.g., DLC) |
| Scalability | Compatible with smaller wafers (e.g., 4") and diverse precursor gases |
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