The vacuum system in PECVD (Plasma-Enhanced Chemical Vapor Deposition) equipment is critical for maintaining the low-pressure environment necessary for thin-film deposition. Key specifications include a KF40 suction port and G1 inch exhaust port, with exhaust velocities of 60L/s for nitrogen and 55L/s with a protective net. The system uses ceramic bearings with grease lubrication, forced air cooling, and operates at 69,000 rpm. It features a TC75 molecular pump controller and a two-stage rotary vane vacuum pump with 160L/min exhaust speed. Compression ratios are 2x10^7 for N2 and 3x10^3 for H2, with a maximum allowable back pressure of 800Pa and bearing life of 20,000 hours. Startup and stop times are 1.5–2 minutes and 15–25 minutes, respectively. These specifications ensure efficient and stable operation, crucial for high-quality film deposition in applications like semiconductor manufacturing and optical coatings.
Key Points Explained:
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Port Configurations and Exhaust Speeds
- KF40 suction port and G1 inch exhaust port: Standardized connections ensure compatibility with other vacuum components.
- Exhaust velocities: 60L/s for nitrogen (55L/s with protective net) indicates high pumping efficiency, critical for maintaining low-pressure conditions during deposition.
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Mechanical and Operational Details
- Ceramic bearings with grease lubrication: Enhance durability and reduce friction at high speeds (69,000 rpm).
- Forced air cooling: Prevents overheating during prolonged operation.
- Startup/stop times: 1.5–2 minutes (startup) and 15–25 minutes (stop) reflect system responsiveness and safety protocols.
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Performance Metrics
- Compression ratios: 2x10^7 for N2 and 3x10^3 for H2 ensure effective gas handling across different process conditions.
- Maximum back pressure: 800Pa limit safeguards the system from overpressure damage.
- Bearing life: 20,000 hours indicates long-term reliability, reducing maintenance costs.
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Integrated Components
- TC75 molecular pump controller: Provides precise control over vacuum levels.
- Two-stage rotary vane pump (160L/min): Works in tandem with the molecular pump for efficient gas evacuation.
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Broader System Context
- PECVD equipment, including mpcvd machine, often integrates these vacuum systems with RF-enhanced reactors (e.g., parallel plate or inductive designs) for uniform plasma generation.
- Features like in-situ plasma cleaning and temperature-controlled wafer stages (20°C–1200°C) complement the vacuum system’s role in achieving high-purity deposition.
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Application Considerations
- The vacuum system’s specifications directly impact film quality in applications such as solar cells, MEMS, and barrier coatings. For example, low film-forming temperatures (<400°C) enable deposition on heat-sensitive substrates.
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Maintenance and Longevity
- Regular monitoring of bearing life and back pressure thresholds ensures sustained performance, aligning with industry standards for semiconductor fabrication tools.
By understanding these specifications, purchasers can evaluate compatibility with their process requirements, balancing speed, precision, and operational lifespan. The integration of robust vacuum systems with advanced PECVD reactors exemplifies technologies that quietly shape modern microelectronics and nanotechnology.
Summary Table:
| Specification | Details |
|---|---|
| Port Configurations | KF40 suction port, G1 inch exhaust port |
| Exhaust Speeds | 60L/s (N₂), 55L/s (with protective net) |
| Bearings & Cooling | Ceramic bearings (grease lubrication), forced air cooling, 69,000 rpm |
| Compression Ratios | 2×10⁷ (N₂), 3×10³ (H₂) |
| Max Back Pressure | 800Pa |
| Bearing Life | 20,000 hours |
| Startup/Stop Times | 1.5–2 min (startup), 15–25 min (stop) |
| Integrated Components | TC75 molecular pump controller, two-stage rotary vane pump (160L/min) |
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